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Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN
Release Time:2022-05-16
  • Institution:
    新一代半导体材料研究院
  • Journal:
    CrystEngComm
  • First Author:
    刘磊
  • Document Code:
    E88578C2C177453189CF279BD1BF982A
  • Issue:
    23
  • Page Number:
    7245
  • Number of Words:
    5000
  • Translation or Not:
    No
  • Date of Publication:
    2021-09
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