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Ta-doped epitaxial beta-Ga2O3 films deposited on SrTiO3(100) substrates by MOCVD
Release Time:2021-05-28
  • Institution:
    集成电路学院
  • Journal:
    Materials Science in Semiconductor Processing
  • First Author:
    王迪
  • Document Code:
    F3B06BABF3F4429293F2971F17DBB39E
  • Volume:
    128
  • Number of Words:
    5
  • Translation or Not:
    No
  • Date of Publication:
    2021-06
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