Epitaxial growth of SnO2 films on 6H-SiC (0 0 0 1) by MOCVD
Release Time:2020-05-30
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- Institution:
- 物理学院
- Title of Paper:
- Epitaxial growth of SnO2 films on 6H-SiC (0 0 0 1) by MOCVD
- Journal:
- Materials Research Bulletin
- First Author:
- 马瑾
- Document Code:
- lw-102410
- Volume:
- 47
- Issue:
- 2
- Page Number:
- 253
- Number of Words:
- 3
- Translation or Not:
- No
- Date of Publication:
- 2012-01
- Release Time:
- 2020-05-30