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Doping Characteristics and Band Engineering of InSe for Advanced Photodetectors: A DFT Study

Release Time:2025-06-05
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Institution:
集成电路学院
Title of Paper:
Doping Characteristics and Band Engineering of InSe for Advanced Photodetectors: A DFT Study
Journal:
Nanomaterials
First Author:
张文恺
Document Code:
63579D313CD042969253EE70528810BF
Issue:
15
Number of Words:
40
Translation or Not:
No
Date of Publication:
2025-06
Release Time:
2025-06-05

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