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Doping Characteristics and Band Engineering of InSe for Advanced Photodetectors: A DFT Study

Release Time:2025-05-27
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Institution:
集成电路学院
Title of Paper:
Doping Characteristics and Band Engineering of InSe for Advanced Photodetectors: A DFT Study
Journal:
NANOMATERIALS
First Author:
张文恺
Document Code:
28B1FF1AC4CF4EF39D2FC55CF1D255B1
Issue:
15
Number of Words:
40
Translation or Not:
No
Date of Publication:
2025-05
Release Time:
2025-05-27

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