一种空间限域法合成二硫化钼单层纳米片的方法

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  • Title:一种空间限域法合成二硫化钼单层纳米片的方法

  • Institution:化学与化工学院

  • Type of Patent:Invent

  • Application Number:2018101818627

  • Number of Inventors:3

  • Service Invention or Not:No

  • Application Date:2018-03-06

  • Publication Date:2019-10-01

  • Authorization Date:2019-10-01

  • Release Time:2019-04-15

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