Return Home
Paper Publications
Engineered interface states and optical absorption of β-Ga2O3/4H-SiC heterojunctions by irradiation-induced oxygen defects from first-principles
Release Time:2025-05-17
  • Institution:
    核科学与能源动力学院
  • Journal:
    Journal of Materials Chemistry C
  • First Author:
    张校宁
  • Document Code:
    1793128394293780482
  • Number of Words:
    5
  • Translation or Not:
    No
  • Date of Publication:
    2024-02
Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University