Paper Publications
Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress
Release Time:2023-12-26
  • Journal:
    IEEE Transactions on Electron Devices
  • First Author:
    马德志
  • Document Code:
    1726496218095108098
  • Number of Words:
    4
  • Translation or Not:
    No
  • Date of Publication:
    2023-10
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