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Bandgap, Mobility, Dielectric Constant, and Baliga's Figure of Merit of 4H-SiC, GaN, and β-Ga2O3from 300 to 620 K
Release Time:2023-12-13
  • Institution:
    前沿交叉科学青岛研究院
  • Journal:
    ACS Applied Electronic Materials
  • First Author:
    Cheng, Lu
  • Document Code:
    1580372811448872962
  • Volume:
    4
  • Issue:
    8
  • Page Number:
    4140-4145
  • Number of Words:
    5
  • Translation or Not:
    No
  • Date of Publication:
    2022-08
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