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High crystal quality β-Ga2O3 epitaxial films grown on porous n-GaN substrates
Release Time:2024-01-10
  • Institution:
    集成电路学院
  • Journal:
    Materials Science in Semiconductor Processing
  • First Author:
    陈蓉蓉
  • Document Code:
    6E9E1B6ECCDA49DFBD33446AD41152BE
  • Issue:
    168
  • Page Number:
    107859
  • Number of Words:
    4
  • Translation or Not:
    No
  • Date of Publication:
    2023-11
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