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Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an example
Release Time:2024-01-09
  • Institution:
    集成电路学院
  • Journal:
    JOURNAL OF ALLOYS AND COMPOUNDS
  • Key Words:
    electrochemical etching;Lu2O3:Eu film;nanoporous GaN array;PL intensity;PLD
  • First Author:
    刘杰
  • Document Code:
    1478208142180356098
  • Volume:
    892
  • Number of Words:
    4
  • Translation or Not:
    No
  • Date of Publication:
    2022-02
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