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Effects of porosity on the structural and optoelectronic properties of Er-doped Ga2O3 epitaxial films on etched epi-GaN/sapphire substrates
Release Time:2022-01-18
  • Institution:
    集成电路学院
  • Journal:
    Ceramics International
  • First Author:
    肖洪地
  • Document Code:
    686BD4C0C2214A248DAA9ADC14D17DAE
  • Issue:
    47
  • Page Number:
    9597
  • Number of Words:
    4
  • Translation or Not:
    No
  • Date of Publication:
    2021-01
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