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beta-Ga2O3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD
Release Time:2019-10-25
  • Institution:
    集成电路学院
  • Journal:
    Materials Science in Semiconductor Processing
  • First Author:
    曹琼
  • All the Authors:
    肖洪地,冯先进,马瑾
  • Document Code:
    3891A01B92C44DCAAD07D31EC88B3B5F
  • Volume:
    77
  • Page Number:
    58
  • Translation or Not:
    No
  • Date of Publication:
    2018-04
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