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Growth process from amorphous GaN to polycrystalline GaN on Si (111) substrates
Release Time:2019-10-24
  • Institution:
    物理学院
  • Journal:
    VACUUM
  • First Author:
    肖洪地
  • All the Authors:
    Jianqiang Liu,林兆军,肖洪地
  • Document Code:
    lw-77690
  • Volume:
    83
  • Issue:
    11
  • Page Number:
    1393
  • Number of Words:
    3000
  • Translation or Not:
    No
  • Date of Publication:
    2009-07
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