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Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties
Release Time:2019-04-14
  • Institution:
    微电子学院
  • Journal:
    Applied surface science
  • First Author:
    肖洪地
  • All the Authors:
    Jianqiang Liu,马瑾
  • Document Code:
    lw-185722
  • Volume:
    387
  • Page Number:
    406
  • Translation or Not:
    No
  • Date of Publication:
    2016-07
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