Kai Qian, Viet Cuong Nguyen, Tupei Chen, Pooi See Lee*. “Amorphous-Si-Based Resistive Switching Memories with Highly Reduced Electroforming Voltage and Enlarged Memory Window” Adv. Electron. Mater. 2016, 2, 1500370.
Release Time:2019-06-12
Hits:
- Title of Paper:
- Kai Qian, Viet Cuong Nguyen, Tupei Chen, Pooi See Lee*. “Amorphous-Si-Based Resistive Switching Memories with Highly Reduced Electroforming Voltage and Enlarged Memory Window” Adv. Electron. Mater. 2016, 2, 1500370.
- Translation or Not:
- No
- Included Journals:
- SCI
- Release Time:
- 2019-06-12
- Prev One:Guofa Cai, Jiangxin Wang, Alice Lee-Sie Eh, Jingwei Chen, Kai Qian, Jiaqing Xiong, Gurunathan Thangavel, Pooi See Lee*, “Diphylleia grayi-Inspired Stretchable Hydrochromics with Large Optical Modulation in the Visible–Near-Infrared Region”, ACS applied materials & interfaces, 2018, 10(43), 37685-37693.
- Next One:Benlin Hu, Chengyuan Wang, Jing Zhang, Kai Qian, Wangqiao Chen, Pooi See Lee, Qichun Zhang, “Water-soluble conjugated polymers as active elements for organic nonvolatile memories”, RSC Advances, 2015,5, 30542-30548.