High crystal quality β-Ga2O3 epitaxial films grown on porous n-GaN substrates
Release Time:2024-01-10
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- High crystal quality β-Ga2O3 epitaxial films grown on porous n-GaN substrates
- Journal:
- Materials Science in Semiconductor Processing
- First Author:
- 陈蓉蓉
- Document Code:
- 6E9E1B6ECCDA49DFBD33446AD41152BE
- Issue:
- 168
- Page Number:
- 107859
- Number of Words:
- 4
- Translation or Not:
- No
- Date of Publication:
- 2023-11
- Release Time:
- 2024-01-10