Structural and electrical properties of epitaxial SnO2: Sb films deposited on 6 H-SiC by MOCVD
Release Time:2021-09-30
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- Institution:
- 集成电路学院
- Title of Paper:
- Structural and electrical properties of epitaxial SnO2: Sb films deposited on 6 H-SiC by MOCVD
- Journal:
- Journal of Materials Science: Materials in Electronics
- First Author:
- 栾彩娜
- Document Code:
- 062581828EBA4033A88622C46DF3939D
- Volume:
- 32
- Issue:
- 16
- Page Number:
- 21798
- Number of Words:
- 3000
- Translation or Not:
- No
- Date of Publication:
- 2021-08
- Release Time:
- 2021-09-30