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Characterization of tunable band gap aluminum indium oxide films prepared on SiO2 (0001) by MOCVD

Release Time:2019-10-24
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Institution:
集成电路学院
Title of Paper:
Characterization of tunable band gap aluminum indium oxide films prepared on SiO2 (0001) by MOCVD
Journal:
Journal of Materials Science: Materials in Electronics
First Author:
马瑾
All the Authors:
栾彩娜,马瑾
Document Code:
lw-178176
Number of Words:
4
Translation or Not:
No
Date of Publication:
2016-01
Release Time:
2019-10-24