Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers
Release Time:2019-10-24
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- Institution:
- 集成电路学院
- Title of Paper:
- Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers
- Journal:
- NANOSCALE
- First Author:
- 曹得重
- All the Authors:
- 毛宏志,Jianqiang Liu,刘向东,肖洪地,栾彩娜
- Document Code:
- D724A0DD21A549D288EB38A47DA64552
- Volume:
- 9
- Issue:
- 32
- Page Number:
- 11504
- Translation or Not:
- No
- Date of Publication:
- 2017-08
- Release Time:
- 2019-10-24