采用射频磁控溅射法在Si (111) 衬底上生长β-Ga2O3 薄膜
Release Time:2019-10-24
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- Institution:
- 物理学院
- Title of Paper:
- 采用射频磁控溅射法在Si (111) 衬底上生长β-Ga2O3 薄膜
- First Author:
- 肖洪地
- All the Authors:
- 栾彩娜,马瑾,林兆军,Fujian Zong,Xijian Zhang,肖洪地
- Document Code:
- lw-73891
- Volume:
- v 37
- Issue:
- n SUPPL.
- Page Number:
- 1
- Number of Words:
- 3000
- Translation or Not:
- No
- Date of Publication:
- 2006-10
- Release Time:
- 2019-10-24