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Bias-independent subthreshold swing in ballistic cold-source field-effect transistors by drain density-of-states engineering

发布时间：2024-09-25 点击数：

所属单位：信息科学与工程学院

论文名称：Bias-independent subthreshold swing in ballistic cold-source field-effect transistors by drain density-of-states engineering

发表刊物：APPLIED PHYSICS LETTERS

第一作者：刘坤一

论文编号：B46A3DC4AF274ED6974E6D915BF1672F

卷号：124

期号：5

是否译文：否

发表时间：2024-01

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李元 (副教授)

Bias-independent subthreshold swing in ballistic cold-source field-effect transistors by drain density-of-states engineering