Impacts of atomistic surface roughness on electronic transport in n-type and ptype MoS2 field-effect transistors
发布时间：2023-09-28 点击数：
所属单位：信息科学与工程学院
论文名称：Impacts of atomistic surface roughness on electronic transport in n-type and ptype MoS2 field-effect transistors
发表刊物：JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
论文编号：7CBB8FBD3AEA4E0B8B27639F2A5CF3DC
期号：1
字数：2
是否译文：否
发表时间：2019-10
上一条： Geometric, Electronic, and Transport Predictions on Two-Dimensional Semiconducting Silicon with Kagome Lattice: Implications for Nanoscale Field-Effect Transistor Applications
下一条： Spontaneous polarization enhancement in ferroelectric Hf0.5Zr0.5O2 using atomic oxygen defects engineering: An ab initio study