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    （包干项目）InGaAs(P)/InP单光子雪崩二极管的光损伤机理研究

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    • Project Name:（包干项目）InGaAs(P)/InP单光子雪崩二极管的光损伤机理研究

    • Institution:光学高等研究中心

    • Leading Scientist:刘俊良

    • Supported by:2024 National Fund Project

    • Nature of Project:纵向

    • Project Level:National

    • Project Number:23EF1D9E1B77390FE063BE07C2CADD38

    • Project Approval Number:62405163

    • Date of Project Approval:2024-08-23

    • Scheduled Completion Time:2027-12-31

    • Date of Project Completion:2027-12-31

    • Date of Project Initiation:2025-01-01

    • Release Time:2024-10-16

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