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The Topological Hall Effect in CoGd Films Controlled by Hydrogen Migration under Gate Voltage
Release Time:2024-05-17| Hits:
Institution:物理学院
Title of Paper:The Topological Hall Effect in CoGd Films Controlled by Hydrogen Migration under Gate Voltage
Journal:Advanced Electronic Materials
First Author:任雪
Document Code:368AFF98D28E49838BFEC7DDA3610BB6
Volume:10
Issue:5
Page Number:2300752
Number of Words:6
Translation or Not:No
Date of Publication:2024-03
Release Time:2024-05-17
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