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2D Multiferroics in As-Substituted Bilayer α-In2Se3 with Enhanced Magnetic Moments for Next-Generation Nonvolatile Memory Device
Release Time:2025-09-19| Hits:
Institution:物理学院
Title of Paper:2D Multiferroics in As-Substituted Bilayer α-In2Se3 with Enhanced Magnetic Moments for Next-Generation Nonvolatile Memory Device
Journal:Advanced Electronic Materials
First Author:王智宽
Document Code:1754415898035314690
Number of Words:4
Translation or Not:No
Date of Publication:2024-01
Release Time:2025-09-19
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