Yifei Philip Zhang
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Schottky-barrier thin-film transistors based on HfO2-capped InSe
  • Title of Paper:
    Schottky-barrier thin-film transistors based on HfO2-capped InSe
  • Journal:
    Appl. Phys. Lett.
  • First Author:
    Y. Wang
  • All the Authors:
    J. Zhang, G. Liang, Y. Shi, Y. Zhang, Z. R. Kudrynskyi, Z. D. Kovalyuk, A. Patane, Q. Xin*, and A. Song*
  • Volume:
    115
  • Issue:
    33502
  • Translation or Not:
    No
  • Date of Publication:
    2019-01
  • Release Time:
    2020-05-19
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